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Windmill® 1310nm/1550nmSuperluminescent diode chips are high-performance products based on quantum well epitaxial layer growth technology and high-reliability ridge waveguide structures.,Features high output optical power and low spectral ripple noise。
Chip size1000μm*350μm*100μm。
absolute maximum ratings
|
parameter |
symbol |
condition |
minimum value |
maximum value |
unit |
|
storage temperature |
Tst |
|
-40 |
100 |
℃ |
|
working temperature |
Top |
|
-25 |
85 |
℃ |
|
Laser forward current (CW) |
I |
CW |
- |
500 |
mA |
|
Laser reverse voltage |
Vr |
|
- |
2 |
V |
|
Static electricity recharge |
ESD |
|
500 |
|
V |
Main performance parameters
|
parameter |
symbol |
condition |
minimum value |
Typical value |
maximum value |
unit |
|
Amplify self-excited radiation power |
PASE |
I=300Ma, CW |
36 |
40 |
|
mW |
|
Gain fluctuation |
δG |
I=100Ma, CW |
|
1 |
|
dB |
|
Normal/Angular plane beam angle |
|
|
|
21.5 |
|
deg |
|
Operating Voltage |
Vf |
I=300Ma, CW |
|
1.6 |
1.8 |
V |
|
Series resistance |
Rs |
I=300Ma, CW |
|
1.0 |
|
Ohm |
|
central wavelength |
λ |
I=100Ma, CW |
|
1306 1550 |
|
nm |
|
wavelength/temperature coefficient |
λ |
I=100Ma, CW, 25℃~52℃ |
|
0.59 |
|
nm/℃ |
|
far field |
θ∥ |
I=100Ma, CW |
|
17 |
|
deg |
|
θ⊥ |
|
21 |
|
deg |
illustrate:Unless otherwise specified,All data test temperature25℃
Recommended bonding conditions
|
process |
Suggested conditions |
|
|
chip bonding |
solder |
AuSn |
|
temperature |
320~350℃ |
|
|
duration |
at most5s |
|
|
pressure |
12gf |
|
|
working environment |
N2 airflow |
|
|
wire bonding |
gold thread |
|
|
Ball soldering |
||
|
Lead diameter |
20μm |
|
|
weight |
20~25g |
|
|
temperature |
140~160℃ |
|
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